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| Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 20V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.3 3.00.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 2.60.1 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 30 2 4 15 40 2 150 -55 to +150 Unit V V A A mJ W C C 7 123 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 1A VDD = 200V, RL = 200 Conditions VDS = 640V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1A VDS = 25V, ID = 1A IDR = 2A, VGS = 0 350 VDS = 20V, VGS = 0, f = 1MHz 60 25 15 20 25 60 3.125 0.7 800 2 4.8 1.1 -1.3 5 7 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 50 2SK2128 PD Ta 30 EAS Tj Avalanche energy capacity EAS (mJ) VDD=50V ID=2A 25 Allowable power dissipation PD (W) Non repetitive pulse TC=25C (1) TC=Ta (2) Without heat sink (PD=2W) 40 Drain current ID (A) 10 IDP ID 1 1ms 10ms 100ms 0.1 t=100s 20 30 (1) 15 20 10 DC 10 (2) 0 0 20 40 60 80 100 120 140 160 5 0.01 1 10 100 1000 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 4 TC=25C VGS=15V 4 5 ID VGS 6 VDS=25V Vth TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) 3 10V Gate threshold voltage Vth (V) 10 12 TC=0C 25C 100C 125C 4 7V 2 6.5V 6V 1 5.5V 5V 0 0 10 20 30 40 50 60 3 3 2 2 1 1 0 0 2 4 6 8 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) RDS(on) ID Drain to source ON-resistance RDS(on) () 12 2.0 | Yfs | ID Forward transfer admittance |Yfs| (S) VDS=25V TC=25C Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C 10 1.5 1000 Ciss 8 VGS=10V 15V 4 6 1.0 100 Coss 0.5 10 Crss 2 0 0 1 2 3 4 5 0 0 1 2 3 4 1 0 50 100 150 200 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs VDS, VGS Qg 800 16 14 12 10 VDS VGS 8 6 4 2 0 24 120 ID=2A TC=25C 2SK2128 td(on), tr, tf, td(off) ID VDD=200V VGS=10V TC=25C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 700 600 500 400 300 200 100 0 0 4 8 12 16 Switching time td(on),tr,tf,td(off) (ns) 100 80 60 td(off) 40 tf tr 20 td(on) 0 0 0.5 1.0 1.5 2.0 2.5 20 Gate charge amount Qg (nC) Drain current ID (A) Rth(t) t 102 Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 100 x 100 x 2mm Al heat sink 10 d=1 0.5 1 0.1 (1) Thermal resistance Rth(t) (C/W) (2) 10-1 0.05 0.01 tP d= tP T 103 10-2 T 10-3 10-2 10-1 1 10 102 10-4 Time t (s) 3 |
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